Semiconductor devices and methods for manufacturing the same

摘要

Certain embodiments relate to semiconductor devices having an improved dielectric strength and methods for manufacturing the same. A semiconductor device 1000 may have a field effect transistor 100. The field effect transistor 100 includes a gate dielectric layer 30, a source region 32 and a drain region 34. A semi-recessed LOCOS layer 40 may be provided between the gate dielectric layer 30 and the drain region 34. An offset impurity layer 42 may be provided below the semi-recessed LOCOS layer 40.