发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF PRODUCING THE SAME |
摘要 |
A semiconductor memory device has access transistors with a gate and a pair of impurity diffusion layers formed on a semiconductor substrate and memory capacitors with a storage node electrode and a cell plate electrode. The electrodes are connected to each other via a capacitive insulating layer made of a ferroelectric material. The storage node electrode has a surface covered with the capacitive insulating layer and is formed in a shape of column on one of the pair of impurity diffusion layers in a hole formed from an inter-layer insulating film covering the access transistor to the one of the pair of impurity diffusion layers. A upper surface of the column does not exceed the inter-layer insulating film. The storage node electrode formed in the hole face the cell plate electrode via the inter-layer insulating film.
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申请公布号 |
US2002003246(A1) |
申请公布日期 |
2002.01.10 |
申请号 |
US19980110252 |
申请日期 |
1998.07.06 |
申请人 |
TAKEUCHI HIDEKI;IZUMI HIROHIKO |
发明人 |
TAKEUCHI HIDEKI;IZUMI HIROHIKO |
分类号 |
H01L21/02;H01L21/768;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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