METHOD AND APPARATUS FOR FORMING A SILICON WAFER WITH A DENUDED ZONE

摘要

An apparatus and method for forming an epitaxial layer on and a denuded zone in a semiconductor wafer. A single chamber is used to form both the epitaxial layer and the denuded zone. The denuded zone is formed by heating the wafer in the chamber and then rapidly cooling the wafer while it is supported on an annular support whereby only a peripheral edge portion of the wafer is in contact with the support.