| 摘要 |
PURPOSE: A method for fabricating a semiconductor memory device using a rapid thermal process is provided to improve a resistance characteristic and a refresh characteristic and increase capacitance by using a rapid thermal process. CONSTITUTION: A process for fabricating a DRAM capacitor is finished and an interlayer dielectric is formed on a surface of the whole structure. A planarization process is performed by using a CMP(Chemical Mechanical Polishing) process. An insulating layer is deposited on the surface of the whole structure in order to prevent the generation of a bridge between metal lines. A rapid thermal process is performed. The rapid thermal process includes the first lamp-up process(A), a stabilization process(B), the second lamp-up process(C), a rapid thermal process(D), the first lamp-down process(E), the stabilization process(F), the second lamp-down process(G), and a cooling process(H).
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