| 摘要 |
PURPOSE: A method for forming a contact pad of a semiconductor device is provided to form a self-aligned contact pad by forming a bit line contact and a storage node contact as a bar type island-shaped contact. CONSTITUTION: A trench is formed on a silicon substrate(21) in order to define a cell region and a peripheral region. The first CVD(Chemical Vapor Deposition) oxide layer(22) is deposited on the whole surface of the silicon substrate(21) including the trench. A gate oxide layer(23), a conductive layer(24), and a capping insulating layer(25) are deposited on the whole surface of the silicon substrate(21). A word line is formed on the silicon substrate(21) by etching the capping insulating layer(25), the conductive layer(24), and the gate oxide layer(23). A sidewall insulating layer(27) is deposited on the whole surface of the silicon substrate(21). A sidewall spacer(27a) is formed on the word line(26) of the cell region. A silicon nitride layer and the second CVD oxide layer are deposited on the whole surface of the silicon substrate(21). The silicon nitride layer and the second CVD oxide layer are flattened by a CVD process. A bit line contact(30a) and a storage node contact(30b) are formed by depositing and flattening a polysilicon layer thereon.
|
