| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to improve an electric characteristic of a semiconductor device by forming an amorphous silicon layer as a single crystalline silicon layer and isolating the single crystalline silicon layer. CONSTITUTION: An insulating layer is formed on the first single crystalline silicon layer(10). The first photoresist layer pattern is formed on the insulating layer. An insulating layer pattern(12) for exposing the first single crystalline silicon layer(10) is formed by etching the insulating layer. The photoresist layer pattern is removed. An amorphous silicon layer connected with the first single crystalline silicon layer(10) is formed on a whole surface of the structure. The second single crystalline silicon layer is formed by performing a solid phase crystallization process for the amorphous silicon layer. An ion implantation mask is formed by isolating the second single crystalline silicon layer. The ion implantation mask is removed. The second single crystalline silicon layer is formed as an oxide layer(14b) by performing a thermal process. An oxide layer pattern(14b) and an active region(14c) are formed by patterning the oxide layer(14b) and the first single crystalline silicon layer.
|
