METHOD FOR FORMING ISOLATION LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to improve an electrical characteristic, by completely eliminating a thermal oxide layer on the lower surface of a trench and by forming a silicon growth layer of a normal type so that the trench is filled with an insulation material. CONSTITUTION: A silicon substrate having the trench is prepared. A plasma treatment is performed regarding the surface of the trench. The thermal oxide layer is formed in the trench. The thermal oxide layer on the lower surface of the trench is removed. After the silicon surface on the lower surface of the trench is cleaned, the silicon growth layer is formed by a selective epitaxial growth(SEG) method.