METHOD FOR FORMING INTERLAYER DIELECTRIC OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming interlayer dielectric of a semiconductor device is provided to increase an operating speed of a device, reduce of a sensing voltage of a sensing amplifier and secure a margin by reducing a capacitance of a word line and a bit line. CONSTITUTION: A low dielectric porous layer is formed on a semiconductor substrate having a device structure by a spin coating method. A silica reticular structure is formed into the porous layer. After performing hydrogen evaporation process to evaporating hydrogen at the porous layer, a bake process and a curing process is performed. The silica reticular structure is formed by means of a supercritical drying method or by curing at room pressure.