| 摘要 |
PURPOSE: An electrostatic discharge(ESD) protection circuit is provided to intensify an ESD characteristic, by implanting charges induced in an ESD operation into the base terminal of an NPN field bipolar transistor to advance an operation point of time. CONSTITUTION: A resistor is connected between an input pad and an internal circuit. An emitter-grounded transistor is connected between the input pad and the resistor. A control unit turns on the transistor when an abnormal voltage is applied from the input pad and discharges the abnormal voltage through the emitter terminal of the transistor, connected to the base terminal of the transistor.
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