| 摘要 |
PURPOSE: A method for forming a contact of a semiconductor device by employing an oxide trench is provided to eliminate the gradient of etch profile caused by the loss of a photoresist layer during oxide etch, and also to permit an easy control of final inspection critical dimension of the photoresist layer. CONSTITUTION: After a photoresist pattern(22) is formed on a silicon wafer(21), a silicon oxide layer(23a) is formed thereon. The silicon oxide layer(23a) is then blanket-etched until the photoresist pattern(22) is exposed. Next, the photoresist pattern is removed and cleaning oxide densification process is performed, so that a portion from which the photoresist pattern(22) is removed forms a contact hole. Here, since the critical dimension of the photoresist pattern(22) itself is that of the oxide layer(23a), the final inspection critical dimension after etching is not differentiated from develop inspection critical dimension after photolithography process.
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