METHOD FOR MANUFACTURING FERROELECTRIC MEMORY DEVICE CAPABLE OF PREVENTING CHARACTERISTIC OF FERROELECTRIC CAPACITOR FROM BEING DEGRADED BY REACTIVE ION ETCH

摘要

PURPOSE: A method for manufacturing a ferroelectric memory device is provided to prevent a characteristic of a ferroelectric capacitor from being degraded by a reactive ion etching(RIE) process performed after the ferroelectric capacitor is formed, by forming ultraviolet(UV) blocking layer covering the ferroelectric capacitor. CONSTITUTION: A ferroelectric capacitor composed of a lower electrode(41), a ferroelectric layer(42) and an upper electrode(43) is formed on a semiconductor substrate. The UV blocking layer(45) is formed on the resultant structure. An interlayer dielectric is formed on the UV blocking layer. The interlayer dielectric and the UV blocking layer are selectively removed by the RIE process to form a contact hole exposing the upper electrode of the ferroelectric capacitor.