| 发明名称 |
MRAM configuration |
| 摘要 |
A magneto-resistive random access memory (MPAM) configuration is described in which line driver circuits are respectively assigned via connecting nodes to two memory cell arrays, with the result that the area for the driver circuits can practically be halved. Therefore a space-saving architecture and a more efficient MRAM configuration is obtained.
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| 申请公布号 |
US2002003720(A1) |
申请公布日期 |
2002.01.10 |
| 申请号 |
US20010898222 |
申请日期 |
2001.07.03 |
| 申请人 |
BOHM THOMAS;KANDOLF HELMUT;LAMMERS STEFAN |
发明人 |
BOHM THOMAS;KANDOLF HELMUT;LAMMERS STEFAN |
| 分类号 |
G11C11/14;G11C11/15;G11C11/16;H01L21/8246;H01L27/10;H01L27/105;H01L43/08;(IPC1-7):G11C11/00 |
主分类号 |
G11C11/14 |
| 代理机构 |
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