发明名称 SEMICONDCTOR DEVICE WITH MULTI-LEVEL INTERCONNECT HAVING EMBEDDED LOE DIELECTRIC CONSTANT LAYER AND PROCESS FOR MAKING SAME
摘要 A process for fabricating a multi-layer interconnect in which an organic low-k material is formed over a topographic substrate. An insulator such as silicon dioxide is formed over the organic low-k material. The insulator is planarized. Contact holes or vias are then etched in the two-layer stack.
申请公布号 US2002004259(A1) 申请公布日期 2002.01.10
申请号 US19990401409 申请日期 1999.09.22
申请人 LUCENT TECHNOLOGIES, INC. 发明人 LIU RUICHEN;MAYNARD HELEN LOUISE;PAI CHEIN-SHING
分类号 H01L21/768;(IPC1-7):H01L21/44;H01L21/48;H01L21/50;H01L21/476 主分类号 H01L21/768
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