发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
A semiconductor device comprises a first MOSFET and a second MOSFET. The first MOSFET includes a first gate insulating film formed on a semiconductor substrate and having a relatively large thickness and a first gate electrode composed of a polysilicon film formed on the first gate insulating film The second MOSFET includes a second gate insulating film formed on the semiconductor substrate and having a relatively small thickness and a second gate electrode composed of a metal film made of a refractory metal or a compound of a refractory metal and formed on the second gate insulating film.
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申请公布号 |
US2002004270(A1) |
申请公布日期 |
2002.01.10 |
申请号 |
US20010931719 |
申请日期 |
2001.08.20 |
申请人 |
MORIWAKI MASARU;YAMADA TAKAYUKI |
发明人 |
MORIWAKI MASARU;YAMADA TAKAYUKI |
分类号 |
H01L21/8234;H01L21/8247;H01L27/06;H01L27/088;H01L27/105;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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