发明名称 METHOD AND APPARATUS FOR FORMING A SILICON WAFER WITH A DENUDED ZONE
摘要 <p>An apparatus and method are provided for forming an epitaxial layer on and denuded zone in a semiconductor wafer used in manufacturing electronic components. The denuded zone and epitaxial layer are formed in one apparatus. The apparatus includes a Bernoulli wand that is used to support the wafer in a cooling position to effect fast cooling of the wafer and formation of the denuded zone.</p>
申请公布号 WO2002003444(A1) 申请公布日期 2002.01.10
申请号 US2001015501 申请日期 2001.05.14
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