| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to form a broad active region in the surface of a semiconductor substrate, by making an isolation layer have a small area in the surface of the semiconductor substrate and have a broader area at it goes farther from the surface. CONSTITUTION: A photoresist layer pattern exposing an inactive region is formed on the semiconductor substrate(1). Oxygen ions are slant-implanted into the semiconductor substrate by using the photoresist layer pattern as a mask to form an oxygen ion implantation region, wherein the slant-implantation process is performed while rotated by 90 degrees and in four directions. The photoresist layer pattern is removed. A heat treatment process is performed to make the oxygen ion implantation region react with silicon in the semiconductor substrate so that an isolation layer(10) is formed.
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