METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to reduce resistance of a source and a drain of a transistor, by performing an ion implantation process after bitline barrier metal is evaporated. CONSTITUTION: The transistor including a landing plug is formed on a cell portion and a peripheral portion of a semiconductor substrate. The first oxide layer is formed. The first mask for a bitline contact exposing the upper portion of the landing plug in the cell portion is formed on the first oxide layer. The first oxide layer is removed by using the first mask for the bitline contact to expose the landing plug. The first mask for the bitline contact is eliminated. The second mask for the bitline contact of which only the portion located on a wordline and an active region of the peripheral portion is open, is formed. The semiconductor substrate in the wordline and an active region is exposed by using the second mask for the bitline contact. The second mask for the bitline contact is removed. A bitline barrier metal layer is formed on the resultant structure including the upper surface of the exposed wordline and the semiconductor substrate, and an ion implantation process is performed regarding the semiconductor substrate. A contact plug is formed on the landing plug, the wordline and the active region of the semiconductor substrate. A bitline is formed on the contact plug.