| 摘要 |
PURPOSE: A method for fabricating a CMOS transistor is provided to solve a problem that a junction depth of a source/drain region is increased due to interstitials caused by collision between oxygen in a pad oxide layer, formed for preventing channeling, and ions implanted for forming the source/drain region. CONSTITUTION: Without using the conventional pad oxide layer, the source/drain region(40) is formed by means of an ion implantation process and an oxygen-added anneal process. The ion implantation process uses an implanter having relatively lower energy and higher dose. The anneal process employs oxygen added to nitrogen conventionally used, so that a degree of activation of implanted impurity is increased. Therefore, The ion implantation is performed with lower energy and thereby the source/drain region has shallower junction depth and lower surface resistance.
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