| 摘要 |
PURPOSE: A device isolation layer formation method of a semiconductor device is provided to obtain a planarized device isolation layer by removing a pad nitride layer after forming a spacer at edge portion of a trench inlet. CONSTITUTION: A pad oxide layer(20) and a pad nitride layer are deposited on the semiconductor substrate(10). A trench is formed by removing a portion of the pad nitride layer, the pad oxide layer and the substrate. A CMP polishing process is performed using the pad nitride layer as a stopper layer after filling the trench with an insulating material(60). A spacer is formed on the edge portion of the trench inlet by etching an entire surface. A planarized isolation layer is formed by removing the pad nitride layer and the spacer.
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