| 摘要 |
PURPOSE: A transistor is provided to reduce a junction leakage current and to increase retention time, by forming a conductive layer electrically connected to a source/drain region on an isolation oxide layer adjacent to the source/drain region. CONSTITUTION: An isolation layer(32) is formed in an isolation region of a substrate(31), having the conductive layer(34) adjacent to an active region. A gate electrode(36) is formed on the substrate by interposing a gate insulation layer. The transistor is formed in the surface of the substrate at both sides of the gate electrode, including the source/drain region(37) electrically connected to the conductive layer.
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