METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to prevent the breakage of a cell capacitor by forming a guarding capacitor at edge portions of a cell block. CONSTITUTION: An MOSFET having a gate electrode and a source/drain electrode region is formed on a cell block(31) of a semiconductor substrate. A first interlayer dielectric having a contact plug is formed at a center portion of the cell block(31) to use as a bit line contact and a storage electrode contact. A second interlayer dielectric having the bit line contact connecting to the contact plug is formed on a top of the resultant structure to use as the bit line. The bit line is formed to connect to the bit line contact. A third interlayer dielectric having the storage electrode contact connecting to the contact plug is formed on a top of the resultant structure to use as the storage electrode contact. A core insulating layer pattern having a trench to use as the storage electrode is formed on the top of the resultant structure, wherein the trench is formed at a center potion and an edge portion of the cell block. A conductive layer for the storage electrode is formed on the top of the resultant structure, and a scarify insulating layer is formed on the top thereof. A cylinder type storage electrode is formed by etching the sacrifice insulating layer and the conductive layer. A guarding ring capacitor(33) is formed at the edge portion of the cell capacitor and the cell block to form a dielectric layer and a plate electrode. A fourth interlayer dielectric having a metal wiring contact hole to expose the guarding capacitor is formed on the top of the resultant structure. A metal wiring contact(37) connecting to the guarding capacitor is formed through the metal wiring contact hole.