| 摘要 |
PURPOSE: A contact formation method of a buried well is provided to easily achieve a power-biasing and to improve an SER(Soft Error Rate) without increasing chip sizes. CONSTITUTION: A P-well(204) and a buried N-well(206) are sequentially formed in a P-type substrate(202). After forming a first insulating layer(208), a contact is formed by sequentially etching the first insulating layer(208) and the buried N-well(206). Then, an N-type polysilicon is sufficiently filled into the contact. After forming a second insulating layer(214) having a contact hole on the resultant structure, a metal interconnection(216) is formed on the resultant structure. Thereby, the polysilicon layer having a low resistance is electrically connected from the buried N-well(206) to the metal interconnection(216).
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