发明名称 |
Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device |
摘要 |
To provide a laser apparatus and a laser annealing method with which a crystalline semiconductor film with a larger crystal grain size is obtained and which are low in their running cost. A solid state laser easy to maintenance and high in durability is used as a laser, and laser light emitted therefrom is linearized to increase the throughput and to reduce the production cost as a whole. Further, both the front side and the back side of an amorphous semiconductor film is irradiated with such laser light to obtain the crystalline semiconductor film with a larger crystal grain size.
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申请公布号 |
US2002004292(A1) |
申请公布日期 |
2002.01.10 |
申请号 |
US20010932935 |
申请日期 |
2001.08.21 |
申请人 |
YAMAZAKI SHUNPEI;OHTANI HISASHI;TANAKA KOICHIRO;KASAHARA KENJI;KAWASAKI RITSUKO |
发明人 |
YAMAZAKI SHUNPEI;OHTANI HISASHI;TANAKA KOICHIRO;KASAHARA KENJI;KAWASAKI RITSUKO |
分类号 |
H01L21/20;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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