HIGHLY CONFORMAL TITANIUM NITRIDE DEPOSITION PROCESS FOR HIGH ASPECT RATIO STRUCTURES

摘要

Process for forming highly conformal titanium nitride on a silicon substrate. A gaseous reaction mixture of titanium tetrachloride and ammonia is passed over the semiconductor substrate surface maintained at a temperature of about 350 DEG C to about 800 DEG C. The r atio of titanium tetrachloride to ammonia is about 5:1 to 20:1. The high degree of conformality achieved by the process of the invention allows TiN layers to be deposited on structures with high aspect ratios and on complicated, three-dimensional structures without forming a large seam or void.