| 摘要 |
PURPOSE: A method for manufacturing a ferroelectric memory device is provided to enhance a property of a capacitor by effectively preventing an increase of a contact ohmic resistance due to thermal recovery for removing an etching impact of the ferroelectric. CONSTITUTION: An etching process is performed at completed state in which a ferroelectric film(43) is formed on a top of substrate(30). An ultraviolet light beam of 3-5 eV is irradiated on the top of the substrate for recovering the deterioration of an entire film of the ferroelectric due to the etching process. An interlayer dielectric(35) is formed on the substrate at which a formation of a lower structure including a transistor is completed. A contact hole which is etched selectively the interlayer dielectric and is exposed a source drain of the transistor, is formed. A polysilicon plug(39) is formed on inside of the contact hole. A capacitor pattern is formed by stacking the lower electrode film(42), the ferroelectric film(43) and an upper electrode film(44) and by selectively etching thereof. The ultraviolet light beam of 3-5 eV is irradiated on the top of the substrate for recovering the deterioration of an entire film of the ferroelectric due to the etching process.
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