| 摘要 |
PURPOSE: A method for forming a copper interconnection of a semiconductor device is provided to remarkably improve a diffusion blocking characteristic by preventing copper ions or atoms from migrating to an insulation layer, and to reduce manufacturing cost by empolying TiN used as a diffusion barrier layer in a conventional process for forming the copper interconnection. CONSTITUTION: After the insulation layer(12) is formed on a semiconductor substrate(11) having a predetermined structure, a predetermined region of the insulation layer is patterned to form a trench exposing a predetermined region of the semiconductor substrate. The diffusion barrier layer(13) is formed on the resultant structure, and is exposed to the atmosphere. After a copper layer(14) is formed on the resultant structure to fill the trench, a polishing process is performed to form the copper interconnection.
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