发明名称 |
Semiconductor memory device having sense amplifier and method for driving sense amplifier |
摘要 |
A semiconductor memory device with a sense amplifier of the present invention reduces an offset voltage between input and output terminals of the sense amplifier to improve sensing sensitivity, whereby improving cell density of the device as well as achieving a stable operation in low voltage. For the purpose of achieving the foregoing objects, the semiconductor memory device with the sense amplifier includes a plurality of switch means for sequentially turning an amplifying method of the sense amplifier to rapidly sense and sufficiently amplify the data loaded on a bit line in response to a plurality of switch control signals.
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申请公布号 |
US2002003734(A1) |
申请公布日期 |
2002.01.10 |
申请号 |
US20010891507 |
申请日期 |
2001.06.27 |
申请人 |
KIM SI HONG;HONG SANG HOON |
发明人 |
KIM SI HONG;HONG SANG HOON |
分类号 |
G11C11/409;G11C7/06;(IPC1-7):G11C7/00 |
主分类号 |
G11C11/409 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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