| 摘要 |
To provide a semiconductor device which can retain information for a long period of time even in a case that the tunnel insulation film is thin. A semiconductor device comprises a first insulation film 14 formed on a semiconductor substrate 10, a floating gate electrode 22 formed on the first insulation film, a second insulation 24 film formed on the floating gate electrode, and a control gate electrode 26 formed on the second insulation film. A depletion layer is formed in the floating gate electrode near the first insulation film in a state that no voltage is applied between the floating gate electrode and the semiconductor substrate.
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