HYBRID SEMICONDUCTOR STRUCTURE AND DEVICE

摘要

Islands of compound semiconductor material can be formed in silicon wafers (201) by etching wells (202) into the silicon wafer, growing an accommodating layer (224) on the silicon wafer, and then growing a compound semiconductor layer (204) on the accommodating layer. The accommodating layer may be a layer of monocrystalline oxide and an amorphous interface layer (228)of silicon oxide separating the monocrystalline oxide from the silicon wafer. The layer or layers that make up the accommodating layer can be annealed to form a single amorphous layer. A template layer (230) may be grown between the accommodating layer and the monocrystalline compound semiconductor layer. A polishing step leaves a flat silicon surface having islands of monocrystalline compound semiconductor material separated from the silicon by the accommodating layer. Electronic components may be formed in the silicon and/or the monocrystalline compound semiconductor material.