| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to prevent reduction of a dielectric constant of a high dielectric layer by forming sequentially the high dielectric layer, a diffusion barrier, and a metal electrode on a semiconductor substrate. CONSTITUTION: A high dielectric layer is deposited on a semiconductor substrate(8) by using an MOCVD(Metal Organic Chemical Vapor Deposition) method. The high dielectric layer is crystallized by performing a thermal process. A diffusion barrier is deposited on the high dielectric layer. An LDD(Lightly Doped Drain) region(13) is formed on the semiconductor substrate(8) of both sides of a gate electrode(11a). The second oxide layer and the first nitride layer are deposited on the semiconductor substrate(8). A sidewall(15) of the second oxide layer and a sidewall(14) of the first nitride layer are formed on both sides of the gate electrode(11a) by performing an etch back process. A source/drain region(12) is formed by implanting high density dopant ions into the semiconductor substrate(8).
|
