| 摘要 |
PURPOSE: A redundancy device of a semiconductor memory device is provided, which enables an independent IO repair per each cell array block by inserting information of a cell array block address into an IO redundancy circuit. CONSTITUTION: An IO redundancy fuse circuit part(70) comprises a cell array selection fuse circuit(50) selecting a specific cell array by receiving signals(bar<0>bar <n>) having address information of a plurality of cell array parts(40) and an IO selection fuse circuit(60) determining whether to repair a specific IO. And an input/output sense amplifier and write driver part980) comprises a plurality of sense amplifiers and write drivers(IO S/A & Write Driver) connected to each IO selection fuse circuit in the IO redundancy fuse circuit part. The IO selection fuse circuit comprises a fuse(62) between a power supply voltage(Vdd) and an NMOS capacitor(61).
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