| 摘要 |
PURPOSE: A method for manufacturing a transistor is provided to prevent a short channel effect of boron ions in a channel region in a selective oxide process and to prevent a pin hole, by forming a gate electrode after NH3 annealing process is performed while a polycrystalline silicon layer, a WN layer as a barrier layer and a tungsten layer are stacked. CONSTITUTION: The gate insulation layer(32), the polycrystalline silicon layer(33), the WN layer(34) and the tungsten layer(35) are sequentially formed on a substrate(31). An annealing process is performed in a NH3 atmosphere(36). A hard mask layer is formed on the tungsten layer. The hard mask layer, the tungsten layer, the WN layer and the polycrystalline silicon layer are selectively etched to form the gate electrode. The gate electrode is selectively oxidized.
|
