| 摘要 |
PURPOSE: A method for forming a capacitor is provided to prevent a voltage shift occurring on the surface of a lower electrode when an interlayer oxide layer is etched to form a contact hole by using a continuous wave(CW) plasma process. CONSTITUTION: The interlayer oxide layer is etched by employing a pulsed plasma process, which can prevent a plasma-induced phenomenon by a rapid decrease of electron temperature and a charge neutralization effect in a plasma-off section. A pulsed plasma apparatus includes an RF power voltage source(45), an RF bias voltage source(46), and a pulse generator(47). In the pulsed plasma process, a pulsed RF power voltage and a CW RF bias voltage, a CW RF power voltage and a pulsed RF bias voltage, or a pulsed RF power voltage and a pulsed RF bias voltage are applied to a chamber(42).
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