| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to minimize a loss and dishing of a polishing stop layer, by using an oxide layer as the polishing stop layer and ceria-based slurry to polish a gap fill oxide layer and the oxide layer. CONSTITUTION: A semiconductor substrate(21) is selectively etched to form a trench of a predetermined depth. The oxide layer as the polishing stop layer is formed on the entire surface including the trench. The gap fill oxide layer is formed on the oxide layer. A chemical mechanical polishing process is performed regarding the polishing stop layer to form a field oxide layer filled in the trench by using the slurry having polishing selectivity of the oxide layer and the gap fill oxide layer.
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