METHOD FOR FORMING INTERLAYER DIELECTRIC OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming an interlayer dielectric of a semiconductor device is provided to stabilize an interlayer dielectric, by preventing a silicon-hydrogen combination of a hydrogen silsesquioxane(HSQ) thin film to control a decrease of a dielectric constant. CONSTITUTION: The first metal interconnection is formed on a semiconductor substrate(21). The first low dielectric thin film is formed on the first interconnection. The second low dielectric thin film is formed on the first low dielectric thin film to prevent a breakdown of a crystalline combination of the first low dielectric thin film in an etch process of the first low dielectric thin film. The first and second low dielectric thin films are selectively etched to form a via hole exposing the first metal interconnection. The second metal interconnection electrically connected to the first metal interconnection through the via hole is formed.