METHOD AND APPARATUS FOR RAPID THERMAL PROCESSING (RTP) OF SEMICONDUCTOR WAFERS

摘要

A system, method, and apparatus is presented for processing a semiconductor substrate in an RTP system, where the surface of the substrate is contacted with an organic halogen containing gas. The substrate temperature is greater than the temperature at which the organic halogen gas dissociates to give free halogen. In the most preferred embodiment, oxygen is also present and a film of chlorinated silicon dioxide is grown on a silicon substrate.