发明名称 SUBSTRATE VOLTAGE GENERATION DEVICE USING DUAL LEVEL
摘要 PURPOSE: A substrate voltage generation device using dual level is provided to maintain a Vbb level rapidly and stably by generating a Vbb2 lower than Vbb level and through a voltage distribution of two voltages, to reduce rapid current consumption. CONSTITUTION: The second substrate voltage generation part(10) is a driver pumping to generate the second substrate voltage(VBB2) lower than a substrate voltage(VBB) being output from the first substrate voltage generation part(1). And, the second substrate voltage sensor part(20) outputs the second substrate voltage control signal to the second substrate voltage generation part in order to output a desired substrate voltage level by detecting the Vbb2 level applied from the second substrate voltage generation part. Also, a substrate voltage switch(30) performs a charge distribution function through VBB VBB2 being output from the first and the second substrate voltage generation part respectively.
申请公布号 KR20020002707(A) 申请公布日期 2002.01.10
申请号 KR20000036959 申请日期 2000.06.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 JUNG, JEONG SU
分类号 G05F3/20;(IPC1-7):G11C5/14 主分类号 G05F3/20
代理机构 代理人
主权项
地址