METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to simultaneously guarantee high capacitance and a low leakage current of a capacitor using a Ta2O5 layer as a dielectric layer, by firstly evaporating a Ru layer used as a lower electrode by a low pressure chemical vapor deposition(LPCVD) method, by performing a mixture plasma treatment of Ar and H2 and by secondly evaporating a Ru layer by an LPCVD method so that the surface roughness of the Ru layer is improved. CONSTITUTION: The first Ru layer is evaporated on a semiconductor substrate having a predetermined structure. Mixture plasma of Ar and H2 is excited to process the first Ru layer. The second Ru layer is evaporated on the first Ru layer to form a secondly-evaporated Ru layer. The secondly-evaporated Ru layer is patterned to form the lower electrode. The Ta2O5 layer is formed on the resultant structure. A TiN layer is formed on the resultant structure, and is patterned to form an upper electrode.