METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to reduce stress and to increase tolerance regarding an etch process, by using a tri-layer dielectric layer to form a gate sidewall so that relatively higher freedom is given to select a property of a dielectric layer inserted into the intermediate layer of the tri-layer dielectric layer as compared with a gate sidewall using a single or double dielectric layer. CONSTITUTION: A gate electrode(33) is formed on a substrate(31). A plurality of dielectric layers are sequentially formed on the entire surface including the gate electrode. The plurality of dielectric layers are etched back in an order opposite to the order in which the dielectric layers are formed, to form a multilayered dielectric layer sidewall(38).