METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to prevent a nitride layer stacked on the sidewall and the upper portion of a gate electrode from being damaged, by etching a low dielectric material on an isolation layer such that the low dielectric material is used as a sacrificial insulation layer in a process for forming a contact plug. CONSTITUTION: An isolation layer(12) is formed on a semiconductor substrate(10). A gate insulation layer is formed on the entire surface, and a stacked structure of a gate electrode(14) and a mask insulation layer pattern(16) is formed. An insulation layer spacer(18) is formed on the sidewall of the stacked structure, and a source/drain region is formed in the semiconductor substrate at both sides of the insulation layer spacer. A stacked structure of a low dielectric sacrificial insulation layer pattern and a hard mask which protects a portion for a bitline contact and a storage electrode contact, is formed on the entire surface. An isolation layer for insulating a contact plug(28b) is formed on the entire surface. The isolation layer and the hard mask are etched to expose the low dielectric sacrificial insulation layer pattern. The low dielectric sacrificial insulation layer pattern is eliminated. A conductive layer is formed on the entire surface. The mask insulation layer pattern is planarized by an etch barrier to form the contact plug.