| 摘要 |
PURPOSE: A contact resistance reduction method is provided to easily decrease the contact resistance of semiconductor devices by transforming a grain state of a polysilicon layer. CONSTITUTION: After forming a polysilicon layer(202) on a substrate(201), a junction region(203) is formed in the substrate by ion-implantation. After forming spacers(204) at both sidewalls of the polysilicon layer(202), an interlayer dielectric(205) having contact holes is formed on the resultant structure. An amorphous silicon layer is deposited into the contact holes and annealed at N2 gas atmosphere, thereby forming a re-crystallized polysilicon film(252) having big grain size. Then, a silicide film(253) is formed on the polysilicon film(252).
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