发明名称 METHOD FOR STABILIZING SURFACE OF IRIDIUM OR RUTHENIUM ELECTRODE
摘要 PURPOSE: A method for stabilizing the surface of an iridium or ruthenium electrode is provided to prevent additional oxidation of a lower electrode in a heat treatment process for crystallizing ferroelectrics, by using NH3 or O3 plasma to form a uniform oxide or nitride layer on the surface of the iridium or ruthenium electrode. CONSTITUTION: The capacitor lower electrode made of an iridium layer is formed. A plasma treatment process is performed regarding the capacitor lower electrode to form a surface reforming layer(29) on the surface of the lower electrode. A dielectric layer is formed on the lower electrode. A capacitor upper electrode is formed on the dielectric layer.
申请公布号 KR20020002643(A) 申请公布日期 2002.01.10
申请号 KR20000036869 申请日期 2000.06.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KWON, SUN YONG;YUM, SEUNG JIN
分类号 H01L27/105;(IPC1-7):H01L27/105 主分类号 H01L27/105
代理机构 代理人
主权项
地址