发明名称 |
METHOD FOR STABILIZING SURFACE OF IRIDIUM OR RUTHENIUM ELECTRODE |
摘要 |
PURPOSE: A method for stabilizing the surface of an iridium or ruthenium electrode is provided to prevent additional oxidation of a lower electrode in a heat treatment process for crystallizing ferroelectrics, by using NH3 or O3 plasma to form a uniform oxide or nitride layer on the surface of the iridium or ruthenium electrode. CONSTITUTION: The capacitor lower electrode made of an iridium layer is formed. A plasma treatment process is performed regarding the capacitor lower electrode to form a surface reforming layer(29) on the surface of the lower electrode. A dielectric layer is formed on the lower electrode. A capacitor upper electrode is formed on the dielectric layer.
|
申请公布号 |
KR20020002643(A) |
申请公布日期 |
2002.01.10 |
申请号 |
KR20000036869 |
申请日期 |
2000.06.30 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KWON, SUN YONG;YUM, SEUNG JIN |
分类号 |
H01L27/105;(IPC1-7):H01L27/105 |
主分类号 |
H01L27/105 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|