| 发明名称 |
SOI SUBSTRATE AND METHOD AND SYSTEM FOR MANUFACTURING THE SAME |
| 摘要 |
A method of manufacturing a high-quality bonded SOI substrate is provided. The step of exposing the bonding interface between two substrates is performed in an atmosphere having cleanliness of Class 1 or more in Fed. St. 209D: USA IS standard. A clean room of Class 1 can be obtained using an air filter having a collection efficiency of 99.9999% (6N) or more for dust particles of a size of 0.1 mum or more.
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| 申请公布号 |
US2002004286(A1) |
申请公布日期 |
2002.01.10 |
| 申请号 |
US19990258951 |
申请日期 |
1999.03.01 |
| 申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
ATOJI TADASHI |
| 分类号 |
H01L21/306;B01D46/48;F24F3/16;H01L21/00;H01L21/02;H01L21/762;H01L27/12;(IPC1-7):C30B1/00;H01L21/30;H01L21/36 |
主分类号 |
H01L21/306 |
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