| 摘要 |
PURPOSE: A phase shift mask for a capacitor is provided to increase a degree of allowance on manufacturing a mask, a process yields and reliability of a device operation by recompensing a bias regarding to a longer axis with a phase shift layer upon formation of a charge storage electrode for a capacitor. CONSTITUTION: A light blocking layer pattern in a rectangular shape is formed a portion corresponding to a charge storage electrode on a transparent substrate(22). A recess for shifting a through pass a light is formed in a longer axis direction of the light blocking layer pattern. The transparent substrate(22) is composed of quartz and the light blocking layer(24) is composed of a Cr.
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