METHOD FOR FORMING MARK

摘要

PURPOSE: A method for forming a mark is provided to prevent a lifting phenomenon of a photoresist layer pattern by forming sequentially an oxide layer and the photoresist layer pattern for indicating an aligning position. CONSTITUTION: A pad oxide layer(32) is formed on a semiconductor substrate(11). The semiconductor substrate(11) is formed by one of a silicon wafer, a GaSi wafer, and an SOI(Silicon On Insulator). The first photoresist layer is applied on the pad oxide layer(32). The first photoresist layer is removed from a trench formation portion by performing an exposure process and a development process. A trench is formed by etching the semiconductor substrate. The first photoresist layer is removed. An oxide layer(35) is formed on a surface of the trench by performing a thermal oxidation process. The second photoresist layer is applied on the pad oxide layer(32) and the oxide layer(35). A photoresist layer pattern(36) is formed by exposing and developing the second photoresist layer.