| 摘要 |
PURPOSE: A method for manufacturing a semiconductor memory device is provided to increase a fabricating process margin of a device by adjusting a thickness of a storage node and self-aligning a bit line and a contact plug of the storage node. CONSTITUTION: A bit line(63) is formed on a semiconductor substrate(61). The first sacrifice insulating layer is formed on the bit line and then is remaining on a contact area of a storage node by selectively etching thereof. The second insulating layer(67) is formed on a removed area of the sacrifice insulating layer. A top area of the bit line(63) is exposed by removing the sacrifice insulating layer and the second insulating layer(67) using a planarizing process. The third insulating layer is formed on the resultant structure and is etched selectively to remain only at a portion except a contact area of the storage node. The storage node layer is formed by removing the sacrifice layer.
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