METHOD FOR FORMING GATE ELECTRODE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A gate electrode formation method of a semiconductor device is provided to form a WSiN preventing layer at subsequent heat treating process by forming a Si3Nx preventing layer using an argon sputtering method under N2 atmosphere. CONSTITUTION: A gate oxide layer(20) and a doped-poly(30) are formed on a semiconductor substrate(10) sequentially. A silicon nitride layer(Si3Nx)(50) is formed on the doped-poly(30). A tungsten layer(60) is formed onto the silicon nitride layer(50). A gate electrode layer is formed by removing a part of the tungsten layer(60), the silicon nitride layer(50), and the doped-poly(30). A heat treating process is performed to form WSiN preventing layer by reacting the tungsten layer and the silicon nitride layer.