| 摘要 |
PURPOSE: A method for fabricating a semiconductor device with a fuse is provided to prevent moisture permeated to a sidewall of a fuse box and minimize an etch damage applied to a bonding pad in an etch process for forming the fuse box. CONSTITUTION: A bit line fuse(102) is formed on a semiconductor substrate(100). An interlayer dielectric(103) is formed on the semiconductor substrate(100) including the bit line fuse(102). An etch stop layer(105) is formed on a predetermined region of the interlayer dielectric(103) to cover the bit line fuse(102). Insulating layers(107,109) are formed on the whole face of the structure. A fuse box(111) for exposing the etch stop layer(105) is formed by patterning the insulating layers(107,109). A metal layer(114) is formed on the structure including the fuse box(111). A metal pattern(114b) for covering a sidewall of the fuse box(111) is formed by patterning the metal layer(114). The etch stop layer(105) is removed. Protective layers(116,117) are formed on the structure including the metal pattern(114b). The protective layers(116,117) are removed from a bottom of the fuse box(111) by patterning the protective layers(116,117).
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