摘要 |
A photoresist composition comprises a binder component, an acid generator and a surface active agent which contains fluorine atom(s). The photoresist composition reduces development deficiency generated at the time of development significantly, without lowering the resolution or the profile. The surface active agent can be represented by a compound of formula (I): <EMI ID=1.1 HE=33 WI=79 LX=725 LY=1229 TI=CF> <PC>wherein R<SP>1</SP> to R<SP>5</SP> independently represent a hydrogen atom, a fluorine atom, an alkyl group having from 1 to 4 carbon atoms or a cyclo-alkyl group having from 5 to 7 carbon atoms, and n is an integer from 10 to 10000. The photoresist can be a positive or negative resist.
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