| 摘要 |
PURPOSE: A MOS semiconductor device and its manufacturing method are provided to drop gate leak current low and make a gate insulating film thin. CONSTITUTION: After forming a silicon nitride film of a prescribed thickness as the gate insulating film, it is treated thermally in oxidative atmosphere to form silicon oxide on the film and this silicon oxide is removed by exposure to a liquid which dissolves it completely. In the consequence of this, the density of nitrogen is higher than that of oxygen in the area of depth 0.12 nm to 0.5 nm from the extreme surface of the film of the film(6) with silicon, nitrogen and oxygen as the main components.
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